The National Institute of Standards & Technology (NIST) seeks information on commercial vendors that are capable of providing a silicon dioxide deep reactive ion etching system. The tool will be installed in a clean room at NIST in Boulder, CO. Both deep (high rate/high aspect ratio) and shallow (moderate rate, sidewall angle control) processes will be required. The etcher will be used for fabricating superconducting thin film integrated circuits and microelectromechanical (MEMS) devices for a wide variety of sensor, imaging, ion confinement and biomagnetic research projects at NIST. After results of this market research are obtained and analyzed and specifications are developed for a deep reactive ion etching system for silicon dioxide that can meet NIST's minimum requirements, NIST may conduct a competitive procurement and subsequently award a Purchase Order. If at least two qualified small businesses are identified during this market research stage, then any competitive procurement that resulted would be conducted as a small business set-aside. This contemplated procurement is anticipated to utilize Recovery Act Funding if it is determined that responsible sources can satisfy the requirement. NIST has a need for a deep reactive ion etching system for silicon dioxide that would meet the following requirements: Wafer size: capable of handling 3 and 4” wafers. Automated load lock. Multiple wafers preferable. Full computer control, continuous data logging and recipe development software. Wafer chuck system capable of cooling wafer to <50 C during etch with minimal edge exclusion. Laser endpoint detection system shall be included. All necessary pumps, chillers, etc. to be included. Dry pumps preferable. Proven process recipes for: 1. Deep (up to 500 micrometers) quartz etch using Cr, Al, Ni or Si mask with >88° sidewall angle. High rate (0.5 µm/min), high aspect ratio. 2. Shallow (<1 micrometer) silicon dioxide with controlled 45° sidewall using photoresist mask. Endpoint on metal or silicon underlayer. Good selectivity. 3. Medium (<10 micrometers) silicon dioxide with >88° sidewalls using photoresist mask. Thin film etches must result in polymer free surfaces. Etch recipes are all