NASA/GRC intends to purchase the items from Biotronics, Inc., 18974 Hunt Rd., Strongsville OH 44136-8414. The experiment calls for the investigation of several gases for etching silicon carbide. Biotronics, Inc. has demonstrated, having performed extensive deep reactive ion etching for NASA/GRC, that it has access to these gases (HBr, Chlorine gases (C12)), and the reactive ion etching tools required to successfully perform the experiments.

Specifications: The starting wafer thickness is 250 microns of semi-insulating (SI) 4H-SiC substrate, on which a 2-5 micron thick n-type CVD grown epitaxial layer is grown. The etch recipe must selectively etch off the 250 microns of the SI substrate and preserve the 2-5 micron thick n-type layer.

The diameter of the array of diaphragms range from 1.6 to 2mm.

The Government intends to acquire a commercial item using FAR Part 12 and Part 13, Simplified Acquisition Procedures.

Interested organizations may submit their capabilities and qualifications to perform the effort in writing to the identified point of contact not later than 4:30 p.m. local time on March 21, 2015. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether or not to conduct this procurement on a competitive basis. A determination by the Government not to compete this proposed effort on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the government.

Oral communications are not acceptable in response to this notice.

NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at http://prod.nais.nasa.gov/pub/p ub_library/Omb.html .