Inductively Coupled Plasma - reactive ion etcher (ICP-RIE) tool is to be procured for the Nano-X laboratory for etching of a wide variety of materials.

ICP Requirements
- At least 3000W, 2MHz RF generator
- 300mm diameter alumina discharge chamber
- Vacuum capacitor automatch unit (AMU)
- Laser endpoint detector port and mounting

RIE Requirements
- 300W 13.56MHz generator
- Air-vane capacitor automatch unit (AMU)
- Connected to lower electrode

Substrate and Electrode Temperature/Size/Material Requirements
- Temperature range of -150°C to +400°C
- Cryo-cooled and electrically-heated lower electrode with automatic switching
- 240mm diameter aluminium lower electrode
- Fully compatible with up to 200 mm diameter wafers

Wafer clamping requirements
- Material: Quartz
- Contact: continuous for 100mm diameter wafer, low profile geometry
- Adjustable clamping force
Helium backing requirements
- Helium assisted heat transfer, lower electrode

Process chamber requirements
- Material: aluminum
- Viewport: KF40 with RF shield

Loadlock
- Fully compatible with up to 200 mm diameter wafers
Gas
- Minimum of 12 lines, non-toxic
- Mass flow controlled gas lines
- Pod for wall mounting of external lines

Software/Hardware
- Control software with multiple user modes including
- Mechanical/pumping control
- Data and recipe logging capability
- Multi-stage gas chop recipe control
- Requisite computer used to control the system

Seismic brackets
- Included

Safety
- Built to UL compliance

Installation, commissioning, shipping
- Included
- Process guarantee

Warranty
- At least 12 months

THIS IS NOT A REQUEST FOR QUOTE. VENDORS INTERESTED IN BEING CONSIDERED AS A POTENTIAL SOURCE SHOULD IDENTIFY THEMSELVES AS AN "INTERESTED PARTY" VIA THE FBO PORTAL. DO NOT CONTACT THE SUBCONTRACT ADMINISTRATOR.