Federal Bid

Last Updated on 16 Apr 2013 at 9 AM
Solicitation
Bethesda Maryland

A--VERTICAL GRAPHENE NANOSHEETS

Solicitation ID N0016713T0032
Posted Date 15 Mar 2013 at 6 PM
Archive Date 16 Apr 2013 at 5 AM
NAICS Category
Product Service Code
Set Aside No Set-Aside Used
Contracting Office Not Specified
Agency Department Of Defense
Location Bethesda Maryland United states 20817
Naval Surface Warfare Center, Carderock Division (NSWCCD), has a requirement for research support services in development of new EPS electrode materials for emerging high power navy requirements and intends to conduct a non-competitive procurement with JME, Inc., Pacoima, CA 91331-1613. JME will be responsible for growing vertical graphene nanosheets on copper and nickelfoil substrates, per their procedure for preparing electrode material for NSWC Carderock to use in research for advanced electrochemical power sources (EPS), such as batteries and capacitors to meet next-navy and navy- after-next requirements. This procurement is in support of research to develop new EPS electrode materials for emerging high power, navy requirements. This requires electrode materials with capabilities beyond what is available today, especially for Electrostatic Double-Layer Capacitors (EDLCs) and graphite based anodes for Li-ion batteries. JME is the only source of vertical graphene nanosheets. The vertical sheets are grown by plasma enhanced radio frequency chemical vapor deposition, which requires a special chamber and a unique understanding of the plasma processing involved. The materials are developed on a laboratory scale per specific requests. Furthermore, the vertical grapheme sheets offer the potential to replace current materials due to their nanostructure architecture. Their unique morphology has the potential to remove binder materials and reduce electrode weights, increasing the performance of the device while at the same time reducing the cost. JME is the only known source of vertical graphene nanosheets for EPS devices with vertical sheet thickness less than1nm. The growth and device development processes are JME proprietary. This notice of intent is not a request for competitive proposals however all responsible sources may submit a capability statement, proposal, or quotation, which shall be considered by the agency. All submissions received within fifteen days from the publication date of this synopsis will be considered by the Government. Please reference RFQ N00167-13-T-0032 with all correspondence.
Bid Protests Not Available

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