This procurement is being conducted under the Simplified Acquisition Procedures (SAP). SI-C WAFERS 1.) RESEARCH GRADE 2 INCH DIAMETER 4H-SILICON CARBIDE WAFER, P-TYPE, CREE INC. #W4PXD8G-000 QUANTITY: 5 EACH 2.) RESEARCH GRADE 2 INCH DIAMETER 4H-SILICON CARBIDE WAFER, SEMI-INSULATING, CREE INC # W4SRD8R-0D00 QUANTITY: 1 EACH 3.) RESEARCH GRADE 2 INCH DIAMETER 4H-SILICON CARBIDE WAFER, HIGH PURITY SEMI-INSULATING, CREE INC. # W4TRD8R-0D00 QUANTITY: 1 EACH 4.) RESEARCH GRADE 2 INCH DIAMETER 4H-SILICON CARBIDE WAFER, P-TYPE, CREE INC. # W6OPXD3O-000 QUANTITY: 5 EACH NASA/GRC intends to purchase the wafers from Cree Inc. THIS IS A SOLE SOURCE. NASA Glenn Research has been developing silicon carbide as a high temperature semiconductor material for many years. It is essential that crystal growth experiments be controlled so that valid comparison of results can be made. NASA uses commercial SIC single crystal wafers as substrates in crystal growth experiments. A SIC-proprietary process produces the requested product. In order to obtain results that are consistent and comparable with prior experiments, the wafers specified must be obtained from Cree Inc. The provisions and clauses in the RFQ are those in effect through FAC 01-06. The NAICS Code and the small business size standard for this procurement are 334413 and 500, respectively. The DPAS rating for this procurement is DO-C9. FAR 52.212-5 is applicable and the following identified clauses are incorporated by reference. [INSERT CLAUSE NUMBERS THAT ARE APPLICABLE] The FAR may be obtained via the Internet at URL: http://www.arnet.gov/far/ The NFS may be obtained via the Internet at URL: http://www.hq.nasa.gov/office/procurement/regs/nfstoc.htm An ombudsman has been appointed - See NASA Specific Note "B".

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