NOTE: THIS POSTING NO. SNL-01742-2 SUPERCEEDS AND REPLACES THE PRIOR POSTING SNL-01742-1 WHICH LISTED AN INVALID URL WEBSITE. RESPONSE REQUIREMENTS NOTICE: THIS IS A SOURCES SOUGHT REQUEST FOR EXPRESSION OF INTEREST FOR A MICROWAVE DOWNSTREAM ASHER/ETCH SYSTEM. All RESPONSES MUST BE SUBMITTED BY EMAIL ONLY TO Nancy Morreale, SANDIA CONTRACTING REPRESENTATIVE: [email protected]. PHONE CALLS CAN NOT BE ACCOMMODATED. DO NOT SEND ANY RESPONSES TO POSTING AGENT DONALD ROSEBOROUGH RESPONDENTS CONSIDERED BY SANDIA TO BE MOST RESPONSIVE IN DESCRIBING THEIR CAPABILITIES TO MEET THE SPECIFICATION REQUIREMENTS STATED HEREIN WILL RECEIVE A DETAILED SOLICITATION COMPLETE WITH ALL TECHNICAL REQUIREMENTS, GENERAL PROVISIONS, TERMS AND CONDITIONS AND OTHER APPLICABLE REQUIREMENTS. Preliminary Specification Requirements: The Downstream Microwave Asher/Etch system shall be used for removing photo-resist and other organic materials from semiconductor devices in the Microsystems and Engineering Sciences and Applications (MESA) facility at Sandia National Laboratories. The Microwave Downstream Plasma Asher/Etcher will be front loading type system with one or possibly two microwave (2.45GHz) sources. The system will have an aluminum process chamber and platen with cooling/heating of the platen between 20 and 140C. The platen and microwave source uniformity will be of such size to process pieces of wafers up to a full 12" wafer . The system will have four gas channels (O2, CF4, N2O, and CO2 specifically) with MFC control on each channel. The system will have an end point detection system. The system will require a dry pump for pressure control and utilize a downstream pressure control approach (i.e. a butterfly will regulate process pressure). Chamber wall liners will be used to minimize downtime due to chamber cleaning. The system shall be computer controlled and complete with interlocking safety and security devices, operating and spare parts, technical manuals and in-situ technical support

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